DMN100-7【PDF 2/4 页】MOSFET N-CH 30V 1.1A SC59-3

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DMN100

Maximum Ratings @T A = 25°C unless otherwise specified

Drain-Source Voltage

Characteristic

Symbol

V DSS

Value

30

Units

V

Gate-Source Voltage

Drain Current

Continuous

Continuous

Pulsed

V GSS

I D

± 20

1.1

4.0

V

A

Thermal Characteristics @T A = 25°C unless otherwise specified

Characteristic

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Symbol

P D

R θ JA

T J , T STG

Value

500

250

-55 to +150

Units

mW

K/W

°C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BV DSS

30

—

—

V

V GS = 0V, I D = 250 μ A

Zero Gate Voltage Drain Current

Gate-Body Leakage

@ T J = 25 ° C

@ T J = 125°C

I DSS

I GSS

—

—

—

—

1.0

10

± 100

μ A

nA

V DS = 24V, V GS = 0V

V GS = ± 12V, V DS = 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V GS(th)

R DS (ON)

g FS

1.0

—

1.3

—

—

2.4

3.0

0.170

0.150

?

V

Ω

S

V DS = 10V, I D = 1.0mA

V GS = 4.5V, I D = 0.5A

V GS = 10V, I D = 1.0A

V DS = 10V, I D = 0.5A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

C iss

C oss

C rss

Q g

Q gs

Q gd

—

—

—

—

—

—

150

90

30

5.5

0.8

1.3

—

—

—

—

—

—

pF

pF

pF

nC

nC

nC

V DS = 10V, V GS = 0V

f = 1.0MHz

V DS = 24V, I D = 1.0A,

V GS = 10V

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t D(ON)

—

10

—

ns

Turn-Off Delay Time

Turn-On Rise Time

Turn-Off Fall Time

t D(OFF)

t r

t f

—

—

—

25

15

45

—

—

—

ns

ns

ns

V DD = 10V, I D = 0.5A,

V GS = 5.0V, R GEN = 50 Ω

SOURCE-DRAIN RATINGS (BODY DIODE)

Continuous Source Current

Pulse Source Current

Forward Voltage

Reverse Recovery Time

I S

I SM

V SD

t rr

—

—

—

—

—

—

—

35

0.54

4.0

1.2

—

A

A

V

ns

—

—

I F = 1.0A, V GS = 0V

I F = 1.0A, di/dt = 50A/ μ s

Notes:

4. Pulse width ≤ 300 μ s, duty cycle ≤ 2%.

DMN100

Document number: DS30049 Rev. 9 - 2

2 of 4

www.diodes.com

March 2012

? Diodes Incorporated

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